Time-Resolved Nonlinear Optical Spectroscopy of Semiconductor Interfaces
Time-resolved nonlinear optical spectroscopies are employed to obtain interface-specific information about electronic structure, vibrational excitations and ultrafast dynamics of charge-transfer processes at semiconductor interfaces. Ongoing studies of GaP/Si(001) as a model for an interface between a polar and a nonpolar inorganic semiconductor will be continued and extended to GaAs/Ge(001). Build-up and decay of transient electric fields following optical excitation at buried interfaces is investigated with optical second-harmonic generation (SHG). Coherent phonon and plasmon dynamics of the systems are studied together with the groups of Petek (University of Pittsburgh/USA) and Ishioka (NIMS, Tsukuba/Japan) as associated partners of this CRC. A new SHG microscopy setup allows to time-resolve charge-transfer processes at interfaces between two-dimensional semiconductors, particularly as a function of their stacking angle. Finally, the dynamics of charge injection from organic thin films into silicon will be studied for well-defined interfaces based on functionalized cyclooctynes.
K. Brixius, A. Beyer, G. Mette, J. Güdde, M. Dürr, W. Stolz, K. Volz, U. Höfer Second-harmonic generation as a probe for structural and electronic properties of buried GaP/Si(001) interfaces
J. Phys.: Condens. Matter 30, 484001 (2018) – Special Issue on Internal Interfaces.
K. Ishioka, A. Beyer, W. Stolz, K. Volz, H. Petek, U. Höfer, C. Stanton Coherent optical and acoustic phonons generated at lattice-matched GaP/Si(001) heterointerfaces
J. Phys.: Condens. Matter 31, 094003 (2019) – Special Issue on Internal Interfaces.
J.E. Zimmermann, B. Li, J.C. Hone, U. Höfer, G. Mette Second-harmonic imaging microscopy for time-resolved investigations of transition metal dichalcogenides
J. Phys.: Condens. Matter 32, 485901 (2020).
G. Mette, J.E. Zimmermann, A. Lerch, K. Brixius, J. Güdde, A. Beyer, M. Dürr, K. Volz, W. Stolz, U. Höfer Femtosecond time-resolved nonlinear optical spectroscopy of charge transfer at the buried GaP/Si(001) interface
Appl. Phys. Lett. 117, 081602 (2020).
J.E. Zimmermann, Y.D. Kim, J.C. Hone, U. Höfer, G. Mette Directional ultrafast charge transfer in a WSe2/MoSe2 heterostructure selectively probed by time-resolved SHG imaging microscopy
Nanoscale Horiz. 5, 1603 (2020).