Prof. Dr. Sangam Chatterjee

Justus-Liebig Universität Gießen

Institute of Experimental Physics I

Heinrich-Buff-Ring 16, 35392 Gießen
Phone: +49 641 9933100
Fax: +49 641 9933139
Email: sangam.chatterjee@physik.uni-giessen.de

Expertise

Experimental condensed-matter physics, semiconductor optics, ultrafast spectroscopy, quasiparticle dynamics, properties and development of lasers

University Education

2009 Habilitation (venia legendi) in Experimental Physics, Philipps-Universität Marburg, “Nonequilibrium Carrier Dynamics in Semiconductor Heterostructures”
2003 Doctoral degree in Optical Sciences (Ph.D.), The University of Arizona, Tucson, Arizona, USA. Dissertation on “Exciton formation dynamics in semiconductor quantum wells” (superior), thesis advisor: Prof. H. M. Gibbs
2002 Master’s degree in Optical Sciences (M.Sc.), The University of Arizona, Tucson, Arizona, USA
2000 Diploma degree in Physics (Dipl. Phys.), Universität Karlsruhe (TH), supervisor: Prof. M. Wegener
1995-00 Studies in Physics, Universität Karlsruhe (TH)

Professional Experience

2016- Professor (W3), Institute of Experimental Physics I, Justus-Liebig-University Giessen
2010-12 Substitute Professor (W2), Faculty of Physics, Philipps-Universität Marburg
2009-16 Lecturer (Privatdozent) and group leader optics, Faculty of Physics, Philipps-Universität Marburg
2005-09 Research Associate (Wiss. Mitarbeiter / Akademischer Rat / Akademischer Oberrat) Group Prof. W. W. Rühle, Faculty of Physics, Philipps-Universität Marburg
2000-03 Research Assistant/ Associate, (Group Prof. H. M. Gibbs) Optical Sciences Center, The University of Arizona (USA)
2000 Fellow, Droege & Comp. Internationale Unternehmerberatung

Honours, Awards and other Proofs of Qualification

2016 Heisenberg Professorship, Justus-Liebig-University Giessen
2015 Best-teacher award, Faculty of Physics, Philipps-Universität Marburg
2001 State of Arizona Proposition 301 fellowship in Quantum Electronics

Selected Publications

  1. T. Vu, H. Haug, W. A. Hügel, S. Chatterjee, M. Wegener, Signature of Electron-Plasmon Quantum Kinetics in GaAs, Phys. Rev. Lett. 85, 3508 (2000).
  2. S. Chatterjee, C. Ell, S. Mosor, G. Khitrova, H. M. Gibbs, W. Hoyer, M. Kira, S. W. Koch, J. P. Prineas, H. Stolz, Excitonic Photoluminescence in Semiconductor Quantum Wells: Plasma versus Excitons, Phys. Rev. Lett. 92, 067402 (2004).
  3. C. Lange, N. S. Köster, S. Chatterjee, H. Sigg, D. Chrastina, G. Isella, H. von Känel, M. Schäfer, M. Kira, S. W. Koch, Ultrafast nonlinear optical response of photoexcited Ge/SiGe quantum wells: Evidence for a femtosecond transient population inversion, Phys. Rev. B 79, 201306(R) (2009).
  4. S. Imhof, A. Thränhardt, A. Chernikov, M. Koch, N. S. Köster, K. Kolata, S. Chatterjee, S. W. Koch, X. Lu, S. R. Johnson, D. A. Beaton, T. Tiedje, O. Rubel, Clustering Effects in Ga(AsBi), Appl. Phys. Lett. 96, 131115 (2010).
  5. B. Ewers, N. S. Köster, R. Woscholski, M. Koch, S. Chatterjee, G. Khitrova, H. M. Gibbs, A. C. Klettke, M. Kira, S. W. Koch, Ionization of coherent excitons strong terahertz electromagnetic fields, Phys. Rev. B 85, 075307 (2012).
  6. K. Kolata, T. Breuer, G. Witte, S. Chatterjee, Molecular Packing Determines Singlet Exciton Fission in Organic Semiconductors, ACS Nano 8, 7377 (2014).
  7. N. W. Rosemann, J. P. Eußner, A. Beyer, S. W. Koch, K. Volz, S. Dehnen, S. Chatterjee, A highly efficient directional molecular white-light emitter driven by a continuous wave laser diode, Science 352 6291 (2016).
  8. A. Rinn, T. Breuer, J. Wiegand, M. Beck, J. Hübner, R. C. Döring, M. Oestreich W. Heimbrodt, G. Witte, S. Chatterjee, Interfacial Molecular Packing Determines Exciton Dynamics in Molecular Heterostructures: The Case of Pentacene–Perfluoropentacene, ACS Appl. Mater. Interfaces 9, 42020 (2017).
  9. P. Klement, C. Steinke, S. Chatterjee, T.O. Wehling, M. Eickhoff, Effects of the Fermi level energy on the adsorption of O2 to monolayer MoS2, 2D Materials 5, 045025 (2018).
  10. T. Rangel, A. Rinn, S. Sharifzadeh, H. Felipe, A. Pick, S. G. Louie, G. Witte, J. B. Neaton L. Kronik, S. Chatterjee, Low-lying excited states in crystalline perylene, Proc. Nat. Acad. Sci. 115, 284 (2018).

Patents

  1. Probst, S. Dürrschmidt, M. Scheller, S. Chatterjee, M. Koch, Variable Laufzeitänderung von elektromagnetischer Strahlung (European Patent 11170587.7 – 2217 (2011)).
  2. W. Rosemann, J. P. Eußner, A. Beyer, K. Volz, S. Dehnen, S. Chatterjee, Molecular white-light emitter (European Patent Application).
  3. S. Chatterjee, M. Weinhold, P. J. Klar, Vorrichtung zur Lichtbereitstellung zur Kohärente Anti-Stokes Raman –Spektroskopie (EP 3 611 484 A1).
  4. M. Becker, S. Chatterjee, K. Holste, P. J. Klar, Verfahren und Vorrichtung zur Sputter-Deposition von einem Objekt beliebiger Geometrie (EP 3 591 090 A1).