Prof. Dr. Michael Dürr
Justus-Liebig Universität Gießen
Institute of Applied Physics
Heinrich-Buff-Ring 16, 35392 Gießen
Phone: +49 641 99-33490
Fax: +49 641 99-33409
Email: michael.duerr@ap.physik.uni-giessen.de
Expertise
Experimental physics; reaction dynamics on semiconductor surfaces, scanning tunneling microscopy; cluster-surface dynamics and application in mass spectrometry
University Education
| 2000 | Doctoral degree in Physics, TU München, Dissertation on “Reaction dynamics of hydrogen on silicon surfaces investigated by means of optical second harmonic generation, molecular beam techniques, and scanning tunneling microscopy”, thesis advisor: Prof. U. Höfer |
| 1997 | Diploma degree in Physics, TU München, supervisor: Prof. U. Höfer |
| 1992-97 | Studies in Physics, Universität Stuttgart and Technische Universität (TU) München |
Professional Experience
| 2013- | Professor (W2) for Cluster Surface Dynamics and Scanning Tunneling Microscopy, Institute of Applied Physics, Justus Liebig University Giessen |
| 2006-13 | Professor (W2) for Surface and Nano Chemistry, Hochschule Esslingen |
| 2006 | Visiting Scientist at Sony Materials Laboratories, Atsugi, Japan (3 months) |
| 2002-06 | Scientist/Senior Scientist at Materials Science Laboratories, Sony Dtl., Stuttgart |
| 2000-02 | Postdoc, Philipps-Universität Marburg (Prof. U. Höfer) |
| 1999 | Visiting Scientist, Physics Department, Columbia University New York, NY, USA (9 months, Prof. T. F. Heinz) |
| 1997-98 | Research Assistant, MPI for Quantum Optics, Garching (Prof. K.-L. Kompa, Prof. U. Höfer) |
Honours, Awards and other Proofs of Qualification
| 2012 | Visiting professor at Peking University, State Key Laboratory for Artificial Microstructure & Mesoscopic Physics, Beijing, China |
| 2006 | Sony Deutschland Patent Award, Sony Deutschland |
| 2006 | Sony Materials Laboratories Science Award, Sony Japan |
| 1999 | DAAD grant for studying abroad |
Selected Publications
- M. Dürr, A. Biedermann, Z. Hu, U. Höfer, T. F. Heinz Probing high-barrier pathways of surface reactions by scanning tunneling microscopy Science 296, 1838 (2002).
- M. Dürr, A. Schmid, M. Obermaier, S. Rosselli, A. Yasuda, G. Nelles Low-temperature fabrication of dye-sensitized solar cells by transfer of composite porous layers Nat. Mater. 4, 607 (2005).
- M. Dürr, U. Höfer Dissociative adsorption of molecular hydrogen on silicon surfaces Surf. Sci. Rep. 61, 465 (2006).
- R. Gebhardt, A. Tomsic, H. Schröder, M. Dürr, K.L. Kompa Matrix-free formation of gas-phase biomolecular ions by soft cluster-induced desorption Angew. Chem. Int. Ed. 48, 4162 (2009).
- M. Dürr, U. Höfer Hydrogen diffusion on silicon surfaces Progr. Surf. Sci. 88, 61 (2013).
- M. Baur, C. R. Gebhardt, M. Dürr Desorption/ionization induced by neutral cluster impact as a soft and efficient ionization source for ion trap mass spectrometry of biomolecules Rapid Commun. Mass Spectrom. 28, 290 (2014).
- M. Reutzel, N. Münster, M. A. Lipponer, C. Länger, U. Höfer, U. Koert, M. Dürr, Chemoselective Reactivity of Bifunctional Cyclooctynes on Si(001), J. Phys. Chem. C 120, 26284 (2016).
- A. Portz, M. Baur, G. Rinke, S. Abb, S. Rauschenbach, K. Kern, M. Dürr, Chemical analysis of complex surface-adsorbed molecules and their reactions by means of cluster-induced desorption/ionization mass spectrometry, Analytical Chemistry 90, 3328 (2018).
- G. Mette, A. Adamkiewicz, M. Reutzel, U. Koert, M. Dürr, U. Höfer, Controlling an SN2 reaction by electronic and vibrational excitation ‐ tip‐induced ether cleavage on Si(001), Angew. Chemie Int. Ed. 58, 3417 (2019).
- J. Heep, J. N. Luy, C. Länger, J. Meinecke, U. Koert, R. Tonner, M. Dürr, Adsorption of methyl-substituted benzylazide on Si(001) – reaction channels and final configurations, J. Phys. Chem. C 124, 9940 (2020).
Patents
- M. Dürr, A. Schmid, G. Nelles, A. Yasuda, Method of producing a porous semiconductor film on a substrate (US 7935263 B2 (2011)).
- M. Dürr, G. Nelles, A. Yasuda, Y. Suzuki, K. Noda, M. Morooka, Photovoltaic cell (US 8193443 B2 (2012)).
- M. Dürr, A. Schmid, G. Nelles, A. Yasuda, Porous semiconductor film on a substrate (US 8319098 B2 (2012)).
- M. Dürr, G. Nelles, A. Yasuda, Photovoltaic device containing carbon nanotubes and at least one organic hole conductor (US 8258500 B2 (2012)).
- M. Dürr, C.R. Gebhardt, Ion generation in mass spectrometers by cluster bombardment (DE 102012008259 B4 (2013)).
- M. Dürr, S. Rosselli, G. Nelles, A. Yasuda, Method of optimizing the band edge positions of the conduction band and the valence band of a semiconductor material for use in photoactive devices (US 8889467 B2 (2014)).
