Measuring spatially-resolved potential drops at semiconductor hetero-interfaces using 4D-STEM– Publication by A5 (Volz) in Small Methods
The team of project A5 of the SFB successfully measured the potential drop across a hetero interface using four-dimensional scanning transmission electron microscopy Characterizing long-range electric fields and built-in potentials in functional materials at nano to micrometer scales is of supreme importance for optimizing devices. For example, the functionality of […]